dcr 720e 18 phase control thyristor ds 6025 - 2 decem ber 201 3 (ln 31165 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr 7 20 e 1 8 dcr 7 20 e 1 6 dcr 7 20 e 1 4 dcr 7 2 0e 12 1 8 00 1 6 00 1 4 00 12 00 t vj = - 40c to 125c, i drm = i rrm = 30 ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100 v respectively lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr 720 e 1 8 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 18 00 v i t(av) 720 a i tsm 83 00 a dv/dt* 1000 v/s di/dt 200 a/s * higher dv/dt selections available fig. 1 package outline outline type code: e (see package details for further information)
semiconductor dcr 720e 2 / 9 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 720 a i t(rms) rms value - 1220 a i t continuous (direct) on - state current - 1100 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 8.3 ka i 2 t i 2 t for fusing v r = 0 0. 344 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0 41 c/w r th(c - h) thermal resistance C case to heatsink double side cooled dc - 0.0 1 c/w t vj virtual junction temperature blocking v drm / v rrm - 125 c t stg storage temperature range - 40 140 c f m clamping force 4 6 kn
semiconductor dcr 720e 3 / 9 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 30 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open 1000 - v/s di/dt rate of rise of on - state current from 67% v drm to 1000a repetitive 50hz - 200 a/s gate source 30v, 10 ? , non - repetitive - 1000 a/s t r < 0.5s, t j = 125c v t on - state voltage it = 1500a, t case = 125c 1.97 v v t(to) threshold voltage C low level t case = 125c - 1.09 v r t on - state slope resistance C low level t case = 125c - 0. 5 87 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3.0 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 100v, di/dt = 10 a/s, - 150 s dv dr /dt = 20v/s linear to 67% v drm q s stored charge i t = 1000a, tp = 1000us,t j = 125c, di/dt = 10 a/s, - 1 5 00 c i rr reverse recovery current - 110 a i l latching current t j = 25c, - 1 a i h holding current t j = 25c, - 200 ma gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 3 v v gd gate non - trigger voltage at 4 0% v drm, t case = 125c tbd v i gt gate trigger current v drm = 5v, t case = 25c 300 ma i gd gate non - trigger current at 4 0% v drm, t case = 125c tbd ma
semiconductor dcr 720e 4 / 9 www.dynexsemi.com curves v tm equation v tm = a + bln (i t ) + c.i t +d. ? i t where a = 0.213846 b = 0.177258 c = 0.000692251 d = - 0.0152068 t hese values are valid for t j = 125 c fig. 2 maximum &minimum on - state characteristics i i (s) r thi ( c/k w) 1 0.5391689 16.5 2 0.1940576 14.19235 3 0.021952 7 7.412673 4 0.002196 2 2.759765 fig. 3 maximum (limit) transient thermal im pedance C junction to case (c/ w) 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 1 2 3 4 5 6 7 instantaneous on - state current, i t - (a) instantaneous on - state voltage,v t - (v) tj=25 c tj=125 c 0 0.01 0.02 0.03 0.04 0.05 0.001 0.01 0.1 1 10 100 thermal impedance zth(j - c) ( c/w ) time ( s ) double side cooled ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? n i t thi thjc i e r t r 1 1 ?
semiconductor dcr 720e 5 / 9 www.dynexsemi.com fig. 4 on - state power dissipation C sine wave fig. 5 maximum permissible case temperature, double side cooled C sine wave fig. 6 maximum permissible case temperature, double side cooled C rectangular wave fig. 7 on - state power dissipation C rectangular wave 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 700 800 mean power dissipation - (w) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 maximum case temperature, t case - ( c) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 maximum case temperature, tcase - ( c) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 100 200 300 400 500 600 700 800 mean power dissipation - (w) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30
semiconductor dcr 720e 6 / 9 www.dynexsemi.com fig. 8 multi - cycle surge current fig. 9 single - cycle i 2 t fig. 10 stored charge vs di/dt fig. 1 1 reverse recovery current vs di/dt 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 1 10 100 surge current, i tsm - (ka) number of cycles conditons: t case =125 c v r =0 pulse width = 10ms 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 1 10 i 2 t (ma 2 s) pulse width, t p - (ms) conditons: t case =125 c v r =0 half - sine wave 0 400 800 1200 1600 2000 2400 2800 3200 1 10 100 stored charge, q s - (uc) rate of decay of on - state current, di/dt - (a/us) conditons: t j =125 c i t =1000a vr=0 0 100 200 300 400 500 1 10 100 reverse recovery current, i rr - (a) rate of decay of on - state current, di/dt - (a/us) conditons: t j =125 c i t =1000a v r =0
semiconductor dcr 720e 7 / 9 www.dynexsemi.com fig .1 2 gate characteristics a is recommended triggering area. b is unreliable triggering area. c is recommended gate load line. fig .1 3 gate characteristics 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 0 50 100 150 200 250 300 350 400 450 500 gate trigger voltage, v gt - (v) gate trigger current i gt , - (ma) tj=25 c tj=125 c upper limit tj= - 40 c lower limit 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 1.0 2.0 3.0 4.0 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) b c a p gm =20w
semiconductor dcr 720e 8 / 9 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: e fig.1 4 package outline
semiconductor dcr 720e 9 / 9 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. alth ough we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, in jury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electr ocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe ha ndling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditi ons, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect pers ons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current ver sion of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this pu blication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
|
